JPH034972Y2 - - Google Patents
Info
- Publication number
- JPH034972Y2 JPH034972Y2 JP3445084U JP3445084U JPH034972Y2 JP H034972 Y2 JPH034972 Y2 JP H034972Y2 JP 3445084 U JP3445084 U JP 3445084U JP 3445084 U JP3445084 U JP 3445084U JP H034972 Y2 JPH034972 Y2 JP H034972Y2
- Authority
- JP
- Japan
- Prior art keywords
- support shaft
- magnetic head
- base
- mounting base
- mount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000037431 insertion Effects 0.000 description 7
- 238000003780 insertion Methods 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3445084U JPS60146916U (ja) | 1984-03-09 | 1984-03-09 | 磁気ヘツドの取付装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3445084U JPS60146916U (ja) | 1984-03-09 | 1984-03-09 | 磁気ヘツドの取付装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60146916U JPS60146916U (ja) | 1985-09-30 |
JPH034972Y2 true JPH034972Y2 (en]) | 1991-02-08 |
Family
ID=30537829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3445084U Granted JPS60146916U (ja) | 1984-03-09 | 1984-03-09 | 磁気ヘツドの取付装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60146916U (en]) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9236473B2 (en) | 2010-02-15 | 2016-01-12 | Micron Technology, Inc. | Field effect transistor devices |
US9275728B2 (en) | 2010-08-12 | 2016-03-01 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell |
KR20230066078A (ko) | 2020-10-15 | 2023-05-12 | 가부시끼가이샤 레조낙 | 플루오로부텐의 보관 방법 |
KR20230066089A (ko) | 2020-10-15 | 2023-05-12 | 가부시끼가이샤 레조낙 | 플루오로-2-부텐의 보관 방법 |
KR20230066079A (ko) | 2020-10-15 | 2023-05-12 | 가부시끼가이샤 레조낙 | 플루오로부텐의 보관 방법 |
KR20230066432A (ko) | 2020-10-15 | 2023-05-15 | 가부시끼가이샤 레조낙 | 플루오로-2-부텐의 보관 방법 |
KR20230067642A (ko) | 2020-10-15 | 2023-05-16 | 가부시끼가이샤 레조낙 | 플루오로-2-부텐의 보관 방법 |
-
1984
- 1984-03-09 JP JP3445084U patent/JPS60146916U/ja active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9236473B2 (en) | 2010-02-15 | 2016-01-12 | Micron Technology, Inc. | Field effect transistor devices |
US9275728B2 (en) | 2010-08-12 | 2016-03-01 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell |
KR20230066078A (ko) | 2020-10-15 | 2023-05-12 | 가부시끼가이샤 레조낙 | 플루오로부텐의 보관 방법 |
KR20230066089A (ko) | 2020-10-15 | 2023-05-12 | 가부시끼가이샤 레조낙 | 플루오로-2-부텐의 보관 방법 |
KR20230066079A (ko) | 2020-10-15 | 2023-05-12 | 가부시끼가이샤 레조낙 | 플루오로부텐의 보관 방법 |
KR20230066432A (ko) | 2020-10-15 | 2023-05-15 | 가부시끼가이샤 레조낙 | 플루오로-2-부텐의 보관 방법 |
KR20230067642A (ko) | 2020-10-15 | 2023-05-16 | 가부시끼가이샤 레조낙 | 플루오로-2-부텐의 보관 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPS60146916U (ja) | 1985-09-30 |
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